Patents Represented by Attorney, Agent or Law Firm Marger, Johnson & McCol
  • Dual-mask etch of dual-poly gate in CMOS processing
    Patent number: 6534414
    Abstract: The invented method involves separately etching the P and N gate features in a dual-poly gate using dual masks, thereby permitting the etching recipes to be tuned to the differentially responsive P and N materials that form the gate.
    Type: Grant
    Filed: June 14, 2000
    Date of Patent: March 18, 2003
    Assignee: Integrated Device Technology, Inc.
    Inventors: Kuilong Wang, Tsengyou Syau, Shih-Ked Lee, Chuen-Der Lien