Abstract: High resolution gray scale graphical images are formed in a semiconductor substrate by the use of two or more levels of indicia having a plurality of image segments and having a continuous conductive line formed in the surface of the substrate, each image segment includes a portion of said continuous conductive line and a contrasting material providing pixels in which the width of the line within a segment varies in relationship to gray scale levels in the graphic image to be formed. Providing a graphic image to be converted; converting the graphic image to a gray level, two dimensional bit mapped converting the bit mapped image into a set of parallel lines of varying width; each line comprising a single continuous segment in which the width varies based on the density of the gray level required to form the gray level image; and transferring the set of lines to a pattern of conductor/insulator lines on a substrate.

Abstract: An antifuse structure for improved programming efficiency is disclosed wherein the antifuse structure including a first node providing a first voltage, a plurality of antifuse elements, and a plurality of first switches. The plurality of antifuse elements are commonly connected to the first node. The plurality of first switches are sequentially activated during a program mode to individually apply the first voltage to each antifuse element. The antifuse structure may include a second node to which a second voltage is provided. Each of the plurality of first switches may be coupled between the second node and a corresponding one of the plurality of antifuse elements. The antifuse structure may also include a third node to which a fuse latch is connected. A plurality of second switches may be coupled between the third node and a corresponding one of the plurality antifuse elements. The plurality of second switches may be simultaneously activated during a read mode.

Abstract: A multi-function semiconductor device is provided. The device includes a bipolar transistor and an FET formed in parallel. A semiconductor substrate is provided on an insulating layer. A source/emitter region and a drain region are formed in the semiconductor substrate and border first opposite sides of a body region therebetween. A gate is formed above the substrate between the source/emitter region and the drain region to form an FET having three terminals including the gate, the source/emitter region, and the drain region. A collector region is formed in the substrate abutting the drain region and extending further under the gate and the drain region. A bipolar transistor having three terminals is formed including a base region, the source/emitter, and the collector region. A shortest distance between the collector region and the source/emitter region defines a base width.

Abstract: A method for forming mixed high voltage/low voltage (HV/LV) transistors for CMOS devices is disclosed. In an exemplary embodiment, depletion of the gate conductor is controlled by leaving a fixed region of the gate conductor intrinsic, or lightly doped, thus separating the heavily doped low resistivity portion of the electrode with an intrinsic region by use of a conducting dopant barrier. The barrier is conductive in nature, but acts as a well-controlled diffusion barrier, stopping the “fast” diffusion which normally takes place in polysilicon, and eliminating diffusion between the conductors. Thereby, the device performance may be precisely predicted by carefully controlling the gate conductor thickness.

Abstract: A monitor for detecting pass gate leakage in a silicon on insulator device and a method for using the same is described herein. A pulse generator supplies a signal to a set of buffers connected in parallel, which pass on a signal to the source side of a series of NFETs. The plurality of NFETs are ordered by increasing channel widths. The NFETs have grounded gates, and therefore will not pass current due to field effects. Each NFET is connected to a latch, and the latches are originally set to the same state. When the signal supplied to the NFET drops from high to low, pass gate leakage will occur through the channel of each NFET. If pass gate leakage through any given NFET is sufficient, the latch will change states. The latch output signal is sent to a shift register, which can be made to output information. By incorporating the monitor on the chip, pass gate leakage tolerances and specifications can be established in-line during manufacture.

Abstract: A multi-level memory cell capable of storing two or three bits of digital data occupies only four lithographic squares and requires only one or two logic level voltage sources, respectively. High noise immunity derives from integration of the multi-level signal in the memory cell directly from logic level digital signals applied to two capacitors (as well as the bit line for the eight level mode of operation) by using capacitors having different values in order to avoid digital-to-analog conversion during writing. The capacitors can be simultaneously written and read to reduce memory cycle time. Transistor channels and capacitor connections are formed on adjacent semiconductor pillars using plugs of semiconductor material between pillars as common gate structures and connections. Opposite surfaces of the pillars also serve as storage nodes with common capacitor plates formed by conformal deposition between rows of plugs and pillars.

Abstract: An asymmetrical ESD protection device and a method of production thereof are provided. A source region and a drain region are formed in a substrate. A gate is formed over the substrate between the drain and source regions. A compensating implant is formed under the source region. The compensating may either be an additional implant or an existing BR resistor well. The compensating implant extends deeper into the substrate than the drain region.

Abstract: A field effect floating gate transistor forming an NVRAM cell is disclosed. A substrate having field isolation structures includes therebetween a doped region forming a channel connecting a source and drain. An oxide layer is disposed over said channel forming a tunneling oxide layer for the device. A layer of polysilicon extends over the oxide layer, to each of the isolation structures and then extends upwards forming a U-shaped pillar floating gate. A second oxide layer disposed within the interior of the U-shaped floating gate supports a control gate. A second layer of polysilicon formed over the second oxide layer forms a control gate, and is connected to a conductor which is common to a row of such cells within a memory. The control gate is coupled to the floating gate through the second oxide layer to the upwardly extending layer of the floating gate as well as over the portion of the floating gate extending over the channel.

Abstract: A method of fabricating a semiconductor device comprising: forming a trench on the face of a silicon substrate of a first conductivity type; depositing a conformal silicon layer of a second conductivity type into the trench; etching away the silicon layer of a second conductivity type selectively to leave portions of the silicon layer in the trench; annealing to drive dopant from the portions of the silicon layer through the walls of the trench into adjacent areas of the silicon substrate; and forming a gate structure in the trench, and source and drain diffusion regions in said silicon substrate on opposing sides of said gate structure.

Abstract: A semiconductor structure may include a silicon substrate, a first active device formed in a first region of the silicon substrate, a second active device formed in a second region of the silicon substrate, a first heating device connected thermally to the first active device and a second heating device connected thermally to the second active device. A first temperature sensing device detects a temperature of the first region, a second temperature sensing device detects a temperature of the second region and a circuit activates one of the first heating device and the second heating device in response to a sensed difference in temperature from the first and second temperature sensing devices.

Abstract: Integrated circuit structure having improved resistance in metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures.

Abstract: A memory system having a read/write head is provided wherein a system clock or a test clock can be used to initiate a pulse for enabling the read/write head during a write period and a delay circuit coupled to the system clock or to the test clock can be used to terminate the enabling or control pulse, with a write clock having an input coupled to the system clock also used to terminate the enabling or control pulse during a write period.