Abstract: An asymmetrical ESD protection device and a method of production thereof are provided. A source region and a drain region are formed in a substrate. A gate is formed over the substrate between the drain and source regions. A compensating implant is formed under the source region. The compensating may either be an additional implant or an existing BR resistor well. The compensating implant extends deeper into the substrate than the drain region.

Abstract: A semiconductor structure may include a silicon substrate, a first active device formed in a first region of the silicon substrate, a second active device formed in a second region of the silicon substrate, a first heating device connected thermally to the first active device and a second heating device connected thermally to the second active device. A first temperature sensing device detects a temperature of the first region, a second temperature sensing device detects a temperature of the second region and a circuit activates one of the first heating device and the second heating device in response to a sensed difference in temperature from the first and second temperature sensing devices.