Patents Represented by Attorney Mark V. Secley

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  • Method for making a semiconductor device with a metal gate electrode
    Patent number: 6893927
    Abstract: A method for making a semiconductor device is described. In that method, a metal layer is formed on a dielectric layer, which is formed on a substrate. After forming a masking layer on the metal layer, the sides of the masking layer are lined with a sacrificial layer.
    Type: Grant
    Filed: March 22, 2004
    Date of Patent: May 17, 2005
    Assignee: Intel Corporation
    Inventors: Uday Shah, Mark L. Doczy, Justin K. Brask, Jack Kavalieros, Matthew V. Metz, Robert S. Chau