Abstract: A method for making a semiconductor device is described. That method comprises forming a nitride based sacrificial layer on a high-k gate dielectric layer to transfer nitrogen from the nitride based sacrificial layer to the high-k gate dielectric layer to form a nitridized high-k gate dielectric layer. The remaining sacrificial layer is then removed from the nitridized high-k gate dielectric layer using a wet etch process that comprises exposing the remaining sacrificial layer to a solution that contains a non-metallic hydroxide. A gate electrode is then formed on the nitridized high-k gate dielectric layer.