Abstract: A method is disclosed for improving the crystallinity of semiconductor films by scanning the surface of such films with a shaped, focused laser beam. The laser is matched to the film so that the beam delivers sufficient energy thereto to heat the film above a temperature at which crystallization occurs along the scan track.
Abstract: Apparatus for the high performance collection of gas entrained particulate, especially submicron particulate, consisting of a fluidized bed of collection sites with an electric field imposed on the bed so that the particulate to be collected, which is charged prior to entering the bed with the fluidizing gas, is electrically induced to agglomerate with the bed particles and the collected matter is removed in a fluidized state with the bed particles, which can consist of the collected material itself.
Type:
Grant
Filed:
October 18, 1974
Date of Patent:
July 26, 1977
Assignee:
Massachusetts Institute of Technology
Inventors:
James R. Melcher, Kenneth S. Sachar, Karim Zahedi
Abstract: A non-volatile charge storage element wherein long-term charge storage occurs in the interface states of the element. Charge is stored at low applied voltages (.ltoreq. 10 volts) in short times (.ltoreq. 1 microseconds) and is stored as long as 10.sup.5 seconds or longer. The states are emptied by exposure to radiation in the visible or the near infrared regions of the spectrum. There are described, also, an information storage device employing a plurality of such elements and a solid-stage camera wherein the image screen includes a plurality of such elements. Changes in the charge storage in each of the elements results in changes in the capacitance of the element; either the capacitance of the element or its charge state is sensed to indicate the state of the element for information storage purposes. In one embodiment, thin film techniques are employed and a change in transconductance is detected to sense the charge state.