Patents Represented by Attorney, Agent or Law Firm Marvin C. Berkovitz
  • Method for fabricating a semiconductor device
    Patent number: 6261882
    Abstract: A semiconductor device comprising a dual polysilicon gate structure in which the P type polysilicon gate is connected with the N type polysilicon gate by a bilayer conductive wiring structure without any contact, thereby significantly contributing to high integration, and a method for fabricating the semiconductor device such that the production yield is improved.
    Type: Grant
    Filed: December 27, 1996
    Date of Patent: July 17, 2001
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Jae Kap Kim