Patents Represented by Attorney Marvin Snynder

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  • Multicellular FET having a Schottky diode merged therewith
    Patent number: 5111253
    Abstract: A semiconductor power switching device comprises a multicellular FET structure with a Schottky barrier diode structure interspersed therewith with at least some of the FET cells being free of Schottky barrier portions. The ratio of Schottky barrier contact area to FET cell area in the overall device may be adjusted to tailor the device for operation at specific current densities.
    Type: Grant
    Filed: August 28, 1990
    Date of Patent: May 5, 1992
    Assignee: General Electric Company
    Inventors: Charles S. Korman, Bantval J. Baliga, Hsueh-Rong Chang