Abstract: The present invention discloses a method for self-alignedly fabricating tunneling field-effect transistor (TFET) based on planar process, thereby lowering requirements on a photolithography process for fabricating the planar TFET. In the method, the source region and the drain region of the TFET are not directly defined by photolithography; rather, they are defined by another dielectric film which locates over an active region and on both sides of the gate and which is different from the dielectric film that defines the channel region. The influence due to the alignment deviation among three times of photolithography process for defining the channel region, the source and the drain regions may be eliminated by selectively removing the dielectric film over the source and drain regions by wet etching.

Abstract: A radio section 1 and a control section 2 allow communications using two radio channels simultaneously, such as TV phone communication and message communication. An LCD 33 displays information concerning each communication simultaneously or selectively when simultaneous communications are being made using two radio channels. Even if communications are made using two radio channels simultaneously, excellent operability is provided and a radio communication terminal can be realized which is low in cost and power dissipation.