Patents Represented by Attorney, Agent or Law Firm Matthew K. Rabdau
  • Method for adjusting ultra-thin SOI MOS transistor threshold voltages
    Patent number: 6709913
    Abstract: A method of adjusting the threshold voltage in an ultra-thin SOI MOS transistor includes preparing a SOI substrate; thinning the SOI top silicon film to a thickness of between about 10 nm and 50 nm; forming an absorption layer on the top silicon film; and implanting ions into the top silicon film through the absorption layer.
    Type: Grant
    Filed: September 4, 2001
    Date of Patent: March 23, 2004
    Assignee: Sharp Laboratories of America, Inc.
    Inventor: Sheng Teng Hsu