Abstract: A major object is to provide an improved semiconductor device capable of preventing occurrence of a crystal defect in a substrate.
A source region is arranged at a surface of a semiconductor substrate and between first and second layered gates. A sidewall spacer is arranged on sidewalls, neighboring to a drain region, of the first and second layered gates. A sidewall spacer is not arranged on sidewalls, neighboring to a source region, of the first and second layered gates.
Abstract: A highly reliable semiconductor device is provided. A silicon nitride film having an opening is formed on a main surface of a silicon substrate. The opening is formed with a side surface. The silicon substrate is etched using the silicon nitride film as a mask to form a trench. The side surface of the silicon nitride film is altered in quality to form a silicon oxide film. A silicon oxide film filling the trench is formed in contact with the silicon oxide film. The silicon nitride film is removed with the silicon oxide film in contact with the silicon oxide film remaining.
Abstract: A communication network system comprising telephone networks concatenated with a packet switched data internetwork such as the Internet is provided. The network system transports voice signals therethrough while minimizing circuit overload in the telephone network circuits inputting signals to be transported through the internetwork. The telephone networks have a common channel interoffice signaling (CCIS) system using signaling system 7 (SS7) signals. The input load to the internetwork from the telephone systems is monitored by monitoring the control signals in the SS7 network. When an overload condition occurs or appears imminent all or part of the load is switched from the trunk circuits of the telephone network to the SS7 network following protocol translation and multiplexing with the control signals in the SS7 network. Provision is made for insuring excess capacity in the SS7 network before load is transferred.
Abstract: An apparatus for applying a uniform load to an object includes a load application element supported to be rotatable about a first axis and movable relative to the object along a second axis to obtain an initial contact sufficient to cause any needed rotation of the load application element until an alignment is obtained between the load application element and a load receiving surface of the object. Further movement of the load application element relative to the object results in a uniformly applied load or the test object.
Type:
Grant
Filed:
March 5, 1997
Date of Patent:
June 16, 1998
Assignee:
Mitsubishi Semiconductor America, Inc.
Inventors:
Thomas Andrews, Mohsen Hajirahim, Bill Palcisko