Patents Represented by Law Firm McDepmott, Will & Emery
  • Bipolar transistor formed by a high energy ion implantation method
    Patent number: 5856218
    Abstract: In an NPN bipolar transistor having a special structure in which each impurity region is formed by ion implantation, a width of a base region is significantly reduced, and therefore, current amplification factor hfe is increased, resulting in improvement in performance thereof. Furthermore, a Bi-CMOS transistor can be manufactured using a CMOS process. The use of the bipolar transistor having a special structure for a driving circuit allows implementation of a driving circuit having large driving force with slight increase in cost.
    Type: Grant
    Filed: May 5, 1997
    Date of Patent: January 5, 1999
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Atsushi Kinoshita, Tomohisa Wada