Abstract: An imaging apparatus with improved convenience, which can perform various types of processing using an imaging device while performing phase difference detection, is provided. An imaging unit (1) includes an imaging device (10) for performing photoelectric conversion to convert light into an electrical signal, the imaging device (10) configured so that light passes through the imaging device (10), a phase difference detection unit (20) for receiving the light having passed through the imaging device (10) to perform phase difference detection, a focus lens group (72) for adjusting a focus position, and a body control section (5) for controlling the imaging device (10) and controlling driving of the focus lens group (72) at least based on a detection result of the phase difference detection unit. The body control section (5) performs a focus operation based on a detection result of the phase difference detection unit during exposure of the imaging device.

Abstract: Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.