Abstract: A vibration sensing device, an acceleration sensing system and a method of manufacturing a vibration sensing device wherein the vibration sensing device comprises a flexible disk that is mounted symmetrically about a radial plane and has a mass located on the disk substantially symmetrical about this radial plane which exerts a force that is greater towards the edge than it is towards the centre of the disk. The vibration sensing device is sensitive to on-axis signals and insensitive to cross axis signals.

Abstract: A method of erasing and a method of programming a nonvolatile memory cell in a chip is disclosed. Said cell comprises a semiconductor substrate including a source and a drain region and a channel therebetween, a floating gate extending over a portion of said channel, a control gate extending over another portion of the channel region, and a program gate capacitively coupled through a dielectric layer to said floating gate. The methods or schemes are using substantially the lowest possible voltage to erase a nonvolatile memory cell of the floating-gate type without having the SILC problem. Therefore, these schemes are expected to allow a further scaling of the minimum feature size of Flash memory products which is necessary for cost reduction and density increase. The present invention also aims to further decrease the voltages necessary to erase/program the memory device without degrading the corresponding performance.