Patents Represented by Attorney McGinn & Ginn, PLLC
  • Patent number: 6950626
    Abstract: A receiver having a retransmission function is provided for alleviating a degradation in the S/N ratio in an FM radio wave for retransmitting an audio signal extracted from a digital broadcasting radio wave even if a receiving situation deteriorates. When the receiving situation is satisfactory, a modulation level is increased during frequency modulation upon retransmission. When the receiving situation deteriorates, the modulation level is reduced. Simultaneously, depending on the varying receiving situation, the processing performed on the audio signal is switched to monophonic or stereophonic.
    Type: Grant
    Filed: March 12, 2002
    Date of Patent: September 27, 2005
    Assignee: Pioneer Corporation
    Inventor: Syoji Suenaga
  • Patent number: 6864189
    Abstract: A method evaluating an integrated circuit manufacturing process first establishes a “desired” profile of a given film in a prescribed manufacturing process by first recording multiple thickness measures taken at regular intervals along a number of lines crossing a plurality of different sample production runs of the same film formed in the integrated circuit manufacturing process. Next, the invention plots the thickness measures to produce sample film profiles of the film. These sample film profiles are averaged in a statistical process to produce the desired film profile. The desired film profile is compared to an actual production run. If the actual film profile does not match the desired film profile, the integrated circuit manufacturing process used to make the actual film profile can then be adjusted to make the actual film profile match the desired film profile more closely.
    Type: Grant
    Filed: June 27, 2003
    Date of Patent: March 8, 2005
    Assignee: International Business Machines Corporation
    Inventors: Timothy S. Hayes, Michael C. Triplett
  • Patent number: 6762070
    Abstract: A cap layer of GaN about 140 Å thick and a p-type clad layer of Mg-doped p-type AlxGa1-xN (x=0.12) about 200 Å thick are formed successively on an MQW active layer about 230 Å thick. A p-type contact layer of Mg-doped p-type AlyGa1-yN (y=0.05) about 600 Å thick is further formed thereon. These composition ratios x and y are selected to satisfy the expression “0.03≦0.3x≦y≦0.5x≦0.08”, so that the composition of the p-type contact layer becomes close to the composition of the p-type clad layer.
    Type: Grant
    Filed: July 11, 2002
    Date of Patent: July 13, 2004
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Naoki Kaneyama, Makoto Asai, Katsuhisa Sawazaki