Abstract: There is disclosed a method for the fabrication of semiconductor device. A problem of short circuit that a metal wiring comes into contact with an area of a silicon substrate which area, when a contact hole is formed, is exposed due to misalignment of the metal wiring mask can be prevented by formation of an oxide layer in a lower area of the contact hole.

Abstract: Disclosed is a novel two-way duplexer structure for the simultaneous transmission and reception of circularly polarized microwaves. This two-way duplexer of the type designed to connect a first set of two inputs/outputs to a second opposite set of two inputs/outputs, each input/output of said duplexer being connected to the combination channel of a combiner/divider, the two division channels of each combiner/divider each providing for the connection with one of the division channels of one of the combiners/dividers connected to a distinct input/output of the opposite set of inputs/outputs, through distinct phase-shifting means.

Abstract: A therapeutic method is provided to arrest or prevent acute kidney failure by administration of a non-toxic pyruvate salt to a patient in need of such treatment.

Abstract: Devices for improving nasal breathing and to nasal drug delivery devices having two end portions of a resilient material in the form of relatively thin tabs, preferably having a gentle curvature, interconnected by a resilient member. Upon bending of the connecting member, the two end tabs can be positioned in respective nostrils where they will be biased outwardly against the nasal side walls, the outward biasing force being sufficient to locate the device in the nose and to dilate the anterior part of each nasal cavity by an amount to improve nasal breathing. No part of the device is grippingly engaged with the septum and a substantial free passage for air flow remains between the septum wall and the nasal side wall-contacting face of each end tab.