Abstract: A metal vapor discharge lamp including an outer tube having a closed portion at a first end and a base at a second end; a discharge tube inside of which an electrode is provided, located in the outer tube; and a sleeve enveloping the discharge tube and located in the outer tube, wherein the sleeve includes an open portion on the closed portion side of the outer tube; the closed portion side of the outer tube is provided with a support for supporting an end of the closed portion side of the sleeve; the support comprises a column portion having a narrow plate shape or a narrow stick shape separated from the open portion of the closed portion side of the sleeve, and a sleeve holding portion provided at an end of the column portion and is in contact with the sleeve; and the support is connected to a feeding body connected to the electrode and led from the discharge tube toward the side of the closed portion, and the support also is connected to an electric power supply wire extending toward the side of the base.
Type:
Grant
Filed:
July 17, 2001
Date of Patent:
August 10, 2004
Assignee:
Matsushita Electric Industrial Co., Ltd.
Abstract: An optical information recording medium comprises a substrate and a multilayered film formed on the substrate, the multilayered film comprising a first information layer, a separating layer, and a second information layer in this order from the side of the substrate. Each of the first information layer and the second information layer comprises a recording layer in which an optical change is caused by irradiation of laser light, and in the first and second information layers, signals can be recorded/reproduced on/from the recording layer by irradiating the recording layer with laser light through the substrate. The first information layer comprises a first protective layer, the recording layer, and a second protective layer in this order from the side of the substrate, and at least one of the first protective layer and the second protective layer comprises at least two layers. The at least two layers comprise a first layer and a second layer in this order from the side near the recording layer.
Type:
Grant
Filed:
May 11, 2000
Date of Patent:
February 4, 2003
Assignee:
Matsushita Electric Industrial Co., Ltd.
Abstract: A fabricating method and a structure of a stacked-type capacitor is provided comprising forming a first dielectric layer having a first via on a semiconductor substrate. A first conductive layer is filled into the first via. Then, insulating layers and dielectric layers are formed. A photolithography step is used to form a second dendriform via in the insulating layers and the dielectric layers. A second conductive layer is filled in the second dendriform via. The insulating layers and conductive layers are removed to form a dendriform lower electrode. The dendriform electrode provides a larger surface area to increase capacitance. Further, a polysilicon layer of hemispherical grains is formed to increase the surface area of the lower electrode.
Type:
Grant
Filed:
March 31, 1998
Date of Patent:
May 16, 2000
Assignee:
United Microelectronics Corp.
Inventors:
Hua-Chou Tseng, Tony Lin, Horng-Nan Chern