Patents Represented by Attorney, Agent or Law Firm Merhcant & Gould P.C.
  • Nonvolatile semiconductor memory device and manufacturing process thereof
    Patent number: 6255691
    Abstract: A floating gate electrode 11 has: a conductive side wall 23 located above a tunnel window 13a, a main part electrode 9 located in the vicinity of the tunnel window 13a and above a channel region 10, and a connecting part 25. The connecting part 25 is located between the conductive side wall 23 and the main part electrode 9 to interconnect the conductive side wall 23 and the main part electrode 9. The region that substantially functions as the tunnel window is determined with the width W1 of the conductive side wall 23.
    Type: Grant
    Filed: December 18, 1998
    Date of Patent: July 3, 2001
    Assignee: Rohm Co., Ltd.
    Inventor: Koji Hashimoto