Patents Represented by Attorney Meyers Bigel Sibley & Sajovec, P.A.
  • Patent number: 8154039
    Abstract: A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode.
    Type: Grant
    Filed: March 11, 2009
    Date of Patent: April 10, 2012
    Assignee: Cree, Inc.
    Inventors: John Adam Edmond, David Beardsley Slater, Jr., Jayesh Bharathan, Matthew Donofrio
  • Patent number: 8110834
    Abstract: A three-dimensional semiconductor device includes a vertical channel pattern on the substrate, a plurality of cell gate patterns and a select gate pattern stacked on the substrate along the sidewall of the vertical channel pattern, a charge storage pattern between the vertical channel pattern and the cell gate pattern and a select gate pattern between the vertical channel pattern and the select gate pattern. The select gate pattern has a different work function from the cell gate pattern.
    Type: Grant
    Filed: January 4, 2010
    Date of Patent: February 7, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jinho Kim, Sunghoi Hur, Hansoo Kim, Younggoan Jang, Sunil Shim
  • Patent number: 7879677
    Abstract: A FinFET includes a fin that is on a substrate and extends away from the substrate. A device isolation layer is disposed on the substrate on both sides of the fin. An insulating layer is between the fin and the substrate. The insulating layer is directly connected to the device isolation layer and has a different thickness than the device isolation layer. A gate electrode crosses over the fin. A gate insulating layer is between the gate electrode and the fin. Source and drain regions are on the fins and on opposite sides of the gate electrode. Related nonvolatile memory devices that include FinFETs and methods of making FinFETs and nonvolatile memory devices are also disclosed.
    Type: Grant
    Filed: July 10, 2008
    Date of Patent: February 1, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Chang-Hyun Lee
  • Patent number: 7804084
    Abstract: Methods of fabricating phase change memory elements include forming an insulating layer on a semiconductor substrate, forming a through hole penetrating the insulating layer, forming a lower electrode in the through hole and forming a recess having a sidewall comprising a portion of the insulating layer by selectively etching a surface of the lower electrode relative to the insulating layer. A phase change memory layer is formed on the lower electrode. The phase change memory layer has a portion confined by the recess and surrounded by the insulating layer. An upper electrode is formed on the phase change memory layer. Phase change memory elements are also provided.
    Type: Grant
    Filed: May 1, 2008
    Date of Patent: September 28, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joon-sang Park, Chang-ki Hong, Sang-yong Kim
  • Patent number: 7647748
    Abstract: Netting chutes suitable for use with manual, automatic and semi-automatic packaging operations to enclose product in netting packaging include chutes with embossed floors.
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: January 19, 2010
    Assignee: Tipper Tie, Inc.
    Inventors: Samuel D. Griggs, Dennis J. May
  • Patent number: 7507567
    Abstract: The present application relates to mutated RNA polymerases from bacteriophages that have increased stability, for example under high temperature conditions. Preferred mutated RNA polymerases according to the invention are mutant RNA polymerases from T7 or SP3 bacteriophages. An especially preferred embodiment of the present invention is a T7 RNA polymerase with a serine to proline amino acid change in the protein at position 633 of the amino acid sequence.
    Type: Grant
    Filed: March 1, 2001
    Date of Patent: March 24, 2009
    Assignee: bioMerieus B.V.
    Inventors: Akio Sugiyama, Yoshiaki Nishiya, Bunsei Kawakami
  • Patent number: 7491796
    Abstract: Retro-inverted forms of GIT targeting agents that target specific receptor sites in vivo and/or promote uptake of active agents and/or enhance active agent delivery across the GIT into the systemic circulation are provided. These retro-inverted peptides and compositions containing these retro-inverted peptides can be used to deliver an active agent, such as a drug or a drug-containing nano- or microparticle for treatment of a condition in a subject in need of the drug, in vivo. Additionally, the invention provides antibodies which are capable of immunospecifically binding the retro-inverted peptides.
    Type: Grant
    Filed: November 19, 1999
    Date of Patent: February 17, 2009
    Assignee: Merrion Research III Limited
    Inventor: Daniel Joseph O'Mahony
  • Patent number: 7411859
    Abstract: A multi-port volatile memory device includes a first port configured for data transfer to/from an external host system and the device. A volatile main memory core is configured to store data received thereat and read requested stored data thereform. A volatile sub memory core is configured to store data received thereat and read requested stored data therefrom. A main interface circuit is coupled to the first port and configured to provide data to/from the volatile main memory core and the first port in a master mode and configured to provide data to/from the volatile sub memory core and the first port in a slave mode. A second port is configured for data transfer to/from an external non-volatile memory device and the device. A sub interface circuit is coupled to the second port and configured to provide data to/from the volatile sub memory core and the second port in the slave mode.
    Type: Grant
    Filed: January 28, 2005
    Date of Patent: August 12, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han-gu Sohn, Sei-jin Kim
  • Patent number: 7305894
    Abstract: According to some embodiments of the present invention, a system for determining characteristics of two rolls configured in a nip press includes a strip configured to be placed in the nip press. A plurality of sensors embedded in the strip is configured to generate signals representative of the pressure and/or the nip width between the two rolls. Interface circuitry facilitates addressing of individual ones of the plurality of sensors via a data processing system.
    Type: Grant
    Filed: May 13, 2005
    Date of Patent: December 11, 2007
    Assignee: Stowe Woodward, L.L.C.
    Inventors: Robert Hunter Moore, David Murphy
  • Patent number: 7211506
    Abstract: The present invention provides methods of forming cobalt layers on a structure comprising forming a preliminary cobalt layer on a semiconductor substrate by introducing an organic metal precursor onto the semiconductor substrate and treating a surface of the preliminary cobalt layer under an atmosphere of a hydrogen-containing gas to remove impurities contained in the preliminary cobalt layer. Compositions of cobalt layers are also provided. Further provided are semiconductor devices comprising cobalt layers provided herein.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: May 1, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang-Jin Moon, Gil-Heyun Choi, Sang-Bom Kang, Hyun-Su Kim
  • Patent number: 7118886
    Abstract: The present invention describes the identification, isolation and characterization of novel mammalian proteins encoded by the Ese1 and Ese2 genes which are involved in endocytosis, vesicular trafficking and regulation of the actin cytoskeleton. Transcripts and products of these genes are useful for detecting abnormal cellular endocytosis processes as well as for developing assay systems to find and elucidate further binding partners of the proteins, to develop therapeutics to alter/restore protein function and for the isolation and manufacture of Ese proteins.
    Type: Grant
    Filed: April 27, 1999
    Date of Patent: October 10, 2006
    Assignee: HSC Research and Development Limited Partnership
    Inventors: Sean E. Egan, Wei Wang, Ameet Sengar
  • Patent number: 6900267
    Abstract: Methods of carrying out a reactive extrusion processes are described that include combining at least one polymer, oligomer, or combination thereof, a carbon dioxide containing fluid, and at least one reactant in an extruder to form a mixture such that the carbon dioxide containing fluid comes into intimate contact with the at least one polymer, oligomer, or combination thereof and assists in a reaction between the at least one polymer, oligomer, or combination thereof and the at least one reactant, and wherein the at least one polymer, oligomer, or combination thereof is modified upon reaction with the at least one reactant.
    Type: Grant
    Filed: December 12, 2002
    Date of Patent: May 31, 2005
    Assignees: North Carolina State University, The University of North Carolina at Chapel Hill
    Inventors: Joseph Royer, Joseph M. DeSimone, George W. Roberts, Saad A. Khan
  • Patent number: 5851468
    Abstract: A structural rebar of the present invention includes: an inner core formed by pultruding reinforcing fibers of a first reinforcing material through a bath or injection system of a first resin material; and an outer cladding comprising an inner cladding layer and an outer cladding layer. The inner core contains at least about 40 percent by weight reinforcing fibers of the first reinforcing material. The inner cladding layer comprises a second resin material reinforced with reinforcing fibers of a second reinforcing material. The fibers of the second reinforcing material are preferably unidirectional and oriented substantially parallel to the fibers of the first reinforcing material. The outer cladding layer comprises a corrosion-resistant third resin material reinforced with a third reinforcing material. Rebar of this configuration can have sufficient strength, rigidity, and corrosion resistance to be suitable for use in cementitious structural members.
    Type: Grant
    Filed: August 27, 1997
    Date of Patent: December 22, 1998
    Inventor: Mark A. Kaiser
  • Patent number: 5773689
    Abstract: Disclosed is a method of making recombinant plant cells having reduced variability of expression and increased levels of expression of foreign genes therein. The method comprises (a) providing a plant cell capable of regeneration; (b) transforming the plant cell with a DNA construct comprising an expression cassette, which construct comprises, in the 5' to 3' direction, a transcription initiation region, a structural gene positioned downstream from the transcription initiation region and operatively associated therewith, and a scaffold attachment region positioned either 5' to the transcription initiation region or 3' to the structural gene, the expression cassette subject to the proviso that T-DNA borders are excluded therefrom. DNA constructs and vectors employed in carrying out the foregoing method are also disclosed, along with plant cells and plants produced thereby.
    Type: Grant
    Filed: April 19, 1995
    Date of Patent: June 30, 1998
    Assignee: North Carolina State University
    Inventors: William F. Thompson, Steven L. Spiker, George C. Allen, Gerald E. Hall, Jr., Lisa C. Childs