Abstract: The semiconductor device includes multilayer wirings of a dual damascene structure. The multilayer wirings include a first wiring layer formed on a semiconductor substrate and a second wiring layer formed on the first wiring layer. The first wiring layer includes a first insulation film, plural first vias provided in the first insulation film, a second insulation film provided on the first insulation film, and a first wiring provided on the first vias and connected to those first vias in the second insulation film. The second wiring layer includes a third insulation film, plural second vias provided in the third insulation film, an adhesive layer provided on the third insulation film, a fourth insulation film provided on the adhesive layer, and a second wiring provided on the second vias and connected to those second vias in the fourth insulation film.