Abstract: A floating gate cell memory device, such as an EPROM or flash EEPROM, with improved discharge speed. A negative bias is applied to the effective substrate during discharge. The negative bias increases the electric field near the junction, thereby increasing the number of hot holes which can be injected to the floating gate, improving discharge speed.

Abstract: A mechanically and electrically efficient, lightweight, portable motor-generator includes a stator having a plurality of windings and a rotor with a body of soft-magnetic material carrying a plurality of permanent, high energy product magnets in a surface near the stator such that relative motion of the rotor and stator causes magnetic flux from the permanent magnets to interact with and induce current in the stator windings. The magnets are mounted in insets formed in the rotor surface which includes portions between the insets to form respective consequence poles. The rotor is a hollow cylinder with the magnets mounted on an internal surface, and the stator is concentrically disposed within the cylinder. The stator includes first and second windings.

Abstract: An integrated process for the treatment of spent catalysts containing mainly molybdenum, vanadium, nickel, cobalt and, alumina to produce ammonium metavanadate, vanadium pentoxide, molybdic trioxide, fused alumina and a high grade nickel/cobalt alloy essentially free of aluminum.

Abstract: In order to optimally control the charging of a rechargeable battery of one or more cells to ensure that full and rapid charge is achieved without damaging the battery, a maximum safe value (or sequence of values during the charging process) for one or more charging parameters is determined during a test charge, and subsequent charges of the battery are performed without exceeding the predetermined maximum value(s) for the charging parameter(s). Among the charging parameters contemplated for use are: the charging voltage potential placed across the battery terminals, the charging current supplied to the battery, the temperature of the battery cell and internal pressure of the battery cell as well as rates of changes of the parameters.

Abstract: A high-speed correlator includes a serial-to-parallel convertor, and a pattern detector. The serial-to-parallel converter converts from ECL to TTL logic. The pattern detector includes a fast latch data pipe, high-speed RAMs and a fast adder. The data pipe applies the received data to the high-speed RAMs as address bits. Depending upon position and errors in the synchronization pattern various locations in the RAM are addressed. By preloading the RAM with appropriate data for a given synchronization pattern, position and error information is read from the addressed location and applied to correlate the data and determine the error content.

Abstract: A memory device, such as a flash EEPROM, has zero birds' beaks and vertically overlapping gates to facilitate high cell density in the EEPROM's core. During fabrication, a layer of field oxide is formed over the core. The active regions are exposed by etching through the layer of field oxide to form vertically walled cavities around the active regions. The tunnel oxide, floating gate, interpoly dielectric, and the control gate are formed within each cavity so that the floating gate overlaps the control gate along the vertical walls. As a result, capacitive coupling between the gates is maintained, yet the horizontal dimensions of the cell decrease. Similarly, the absence of birds' beaks facilitates higher cell density in the core.

Abstract: A memory device, such as a flash EEPROM, has zero birds' beaks and vertically overlapping gates to facilitate high cell density in the EEPROM's core. During fabrication, a layer of field oxide is formed over the core. The active regions are exposed by etching through the layer of field oxide to form vertically walled cavities around the active regions. The tunnel oxide, floating gate, interpoly dielectric, and the control gate are formed within each cavity so that the floating gate overlaps the control gate along the vertical walls. As a result, capacitive coupling between the gates is maintained, yet the horizontal dimensions of the cell decrease. Similarly, the absence of birds' beaks facilitates higher cell density in the core.

Abstract: A memory device, such as a flash EEPROM, employs a high energy implantation to form common source line, avoiding the necessity of self-aligned source etch processes. The use of the high energy implantation, and avoiding the etching process, provides for greater cell uniformity, and better V.sub.T distribution.

Abstract: A flash EEPROM having reduced column leakage current suitably includes cells with more uniform erase times arranged in an array. An intermediate n+ implant immediately following the DDI implant step suitably provides an enhanced doping profile in the tunneling region, which increases the rate at which F-N tunneling occurs to erase the cells, and which increases the uniformity of F-N tunneling rates among memory cells within the array. A thermal cycle drives the intermediate n+ implant deeper into the tunneling region. Alternatively, an n+ implant may be performed at a relatively large angle with respect to the semiconductor substrate, which improves the doping concentration in the tunneling region of the source.

Abstract: A memory device including an array of cells, where a reference current is generated by a predetermined number of reference cells disposed separate from the array of cells, the transconductance of such reference cells being equal to the transconductance of the cells of the array.

Abstract: A light emitting module is attached to one of a pair of separable U-shaped metal clamps that can fit around a weapon trigger guard. The clamps have recesses for retaining elastomeric inserts which contact the trigger guard. The inserts are of inexpensive glass-filled molded plastic rather than machined steel so that a greater variety can be provided at low cost and little value is lost by discarding those not needed for a particular weapon. The greater variety provides a better fit with little or no custom shaping and the elastomeric inserts are much easier to shape if an unusually contoured trigger guard is encountered. A slide switch passes through the clamp and is actuated by either a right or left handed user. The motion of the switch is transverse to the trigger guard and firing direction of the gun.

Abstract: A floating gate cell memory device, such as an EPROM or flash EEPROM, with improved discharge speed. A negative bias is applied to the effective substrate during discharge. The negative bias increases the electric field near the junction, thereby increasing the number of hot holes which can be injected to the floating gate, improving discharge speed.

Abstract: An electronic book comprising a plurality of leaves, each leaf comprising pages of printed material bound at one edge to form a spine, with electrical circuits formed in each leaf. A common electronic circuit such as a speech generator and/or controller cooperates with the electrical circuits on each of the various pages, connected to the electrical circuits in the leaves through conductive paths through the spine of the book. The electrical circuits in the leaves include electrical elements such as switches, and sensory output devices (e.g., thermochromic devices, light emitting diodes, thermo-olfactory devices, electrochromic devices, and the like). The electrical elements are associated with particular portions of the printed material so that the particular portions can be selectively highlighted or emphasized (e.g., designated by actuation of a visual or olfactory device and/or text read).

Abstract: A light emitting module is attached to one of a pair of separable U-shaped metal clamps that can fit around a weapon trigger guard. The clamps have recesses for retaining elastomeric inserts which contact the trigger guard. The inserts are of inexpensive glass-filled molded plastic rather than machined steel so that a greater variety can be provided at low cost and little value is lost by discarding those not needed for a particular weapon. The greater variety provides a better fit with little or no custom shaping and the elastomeric inserts are much easier to shape if an unusually contoured trigger guard is encountered. The electrical cord running to the on/off switch for the module emerges from the module in fixed relationship to the clamps and need not be removed to change the module batteries. A trigger guard mountable laser sight that is more resistant to shock and requires less ongoing adjustment to maintain light beam and boresight coincidence is obtained.

Abstract: A memory device, such as a flash EEPROM, employs a high energy implantation to form common source line, avoiding the necessity of self-aligned source etch processes. The use of the high energy implantation, and avoiding the etching process, provides for greater cell uniformity, and better V.sub.T distribution.

Abstract: A bender for bending metal rod to form surgical implants in a sterile operating room environment. The bender being made of an autoclavable material having a hardness greater than the maximum hardness of the rod to be bent. The bender includes a capstan, a primary mandrel, a gripping element, and a follower mandrel. The primary mandrel, which rotates with the capstan, includes at least one generally cylindrical portion with a guide channel formed in the periphery thereof. The follower mandrel also includes at least one generally cylindrical portion with a guide channel formed in the periphery thereof. The follower guide channels are disposed in planar alignment with the corresponding guide channel of the primary mandrel to form bending channels therebetween. The gripping member is mounted for rotation with said primary mandrel, and encloses a portion of the primary mandrel guide channel(s) to form a passageway of predetermined configuration.