Abstract: Broad spectrum light emitting devices and methods and semiconductor chips for fabricating such devices include a light emitting element, such as a diode or laser, which emits light in a predefined range of frequencies. The light emitting element includes a shaped substrate suitable for light extraction through the substrate and a cavity in the substrate proximate the light emitting element. For example, a trench adjacent at least a portion of the periphery of the light emitting element may be provided. The cavity/trench is configured to contain light conversion material such that light extracted from sidewalls of the cavity/trench passes through the light conversion material contained in the cavity/trench. Methods of fabricating such devices and/or chips are also provided.