Abstract: Apparatus for converting superconductor low level signals to semiconductor signal levels utilizing a continuous superconductor to semiconductor converter circuit biased for maximum gain and without the need for a clocked reset signal. Employing a unique biasing arrangement utilizing two capacitors and one transistor, this circuit has long term bias voltage retention and good power supply noise rejection ratio.
Type:
Grant
Filed:
May 7, 1993
Date of Patent:
June 13, 1995
Assignee:
Microelectronics And Computer Technology Corporation
Abstract: A field emitter comprising a conductive metal and a diamond emission tip with negative electron affinity in ohmic contact with and protruding above the metal. The field emitter is fabricated by coating a substrate with an insulating diamond film having negative electron affinity and a top surface with spikes and valleys, depositing a conductive metal on the diamond film, and applying an etch to expose the spikes without exposing the valleys, thereby forming diamond emission tips which protrude a height above the conductive metal less than the mean free path of electrons in the diamond film.
Type:
Grant
Filed:
November 24, 1992
Date of Patent:
August 23, 1994
Assignee:
Microelectronics And Computer Technology Corporation