Abstract: The present invention is directed to providing a template with alignment marks that are opaque to selective wavelength of light. In one embodiment, a template is provided having patterning areas and a template, with the template mark being formed from metal and disposed outside of the patterning areas. The alignment marks may be surrounded by a moat to prevent curable liquid from being in superimposition therewith during imprinting. In this manner, opaque alignment marks may be employed without degrading the quality of the pattern formed during imprinting.

Abstract: The present invention provides a method of planarizing a substrate, the method including, forming, on the substrate, a patterned layer having a first shape associated therewith; and processing the patterned layer, with the first shape compensating for variations in the processing such that upon processing the patterned layer, the patterned layer comprises a substantially planar shape.

Abstract: The present invention is directed toward a method for reducing pattern distortions in imprinting layers by reducing gas pockets present in a layer of viscous liquid deposited on a substrate. To that end, the method includes varying a transport of the gases disposed proximate to the viscous liquid. Specifically, the atmosphere proximate to the substrate wherein a pattern is to be recorded is saturated with gases that are either highly soluble, highly diffusive, or both with respect to the viscous liquid being deposited. Additionally, or in lieu of saturating the atmosphere, the pressure of the atmosphere may be reduced.

Abstract: Described are systems for patterning a substrate by imprint lithography. Imprint lithography systems include an imprint head configured to hold a template in a spaced relation to a substrate. The imprint lithography system is configured to dispense an activating light curable liquid onto a substrate or template. The system includes a light source that applies activating light to cure the activating light curable liquid. Multiple optical imaging devices are used to align the template with the substrate.

Abstract: The present invention features a method of patterning a substrate that includes forming, on the substrate, a multi-layer film defining an etch rate interface having a plurality of first portions that having a first etch rate associated therewith. The multi-layer film includes a second portion having a second etch rate associated therewith. Adjacent first portions are separated by the second portion. A pattern is transferred onto the substrate that is defined, in part, by the junction. The difference between the first and second etch rates is selected to minimize bowing of recessed features formed in the pattern.

Abstract: A method for forming imprint lithography templates is described herein. The method includes forming a masking layer and a conductive layer on a substrate surface. The use of a conductive layer allows patterning of the masking layer using electron beam pattern generators. The substrate is etched using the patterned masking layer to produce a template.

Abstract: Described are methods for patterning a substrate by imprint lithography. Imprint lithography is a process in which a liquid is dispensed onto a substrate. A template is brought into contact with the liquid and the liquid is cured. The cured liquid includes an imprint of any patterns formed in the template. Alignment of the template with a previously formed layer on a substrate, in one embodiment, is accomplished by using scatterometry.

Abstract: The present invention is directed to providing a method and system to measure characteristics of a film disposed on a substrate. The method includes identifying a plurality of processing regions on the film; measuring characteristics of a subset of the plurality of processing regions, defining measured characteristics; determining a variation of one of the measured characteristics; and associating a cause of the variations based upon a comparison of the one of the measured characteristics to measured characteristics associated with the remaining processing regions of the subset. The system carries out the aforementioned method.