Patents Represented by Attorney Michael D. Plomie

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  • Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliability
    Patent number: 7153774
    Abstract: A method of making a semiconductor device is described. That method includes forming a copper containing layer on a substrate, and forming an alloying layer that includes an alloying element on the copper containing layer. After applying heat to cause an intermetallic layer that includes copper and the alloying element to form on the surface of the copper containing layer, a barrier layer is formed on the intermetallic layer.
    Type: Grant
    Filed: June 6, 2002
    Date of Patent: December 26, 2006
    Assignee: Intel Corporation
    Inventors: Stefan Hau-Riege, Christine Hau-Riege, Wen-Yue Zheng