Patents Represented by Attorney Michael D. Plomier

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  • CMOS device with metal and silicide gate electrodes and a method for making it
    Patent number: 7153734
    Abstract: A semiconductor device and a method for forming it are described. The semiconductor device comprises a metal NMOS gate electrode that is formed on a first part of a substrate, and a silicide PMOS gate electrode that is formed on a second part of the substrate.
    Type: Grant
    Filed: December 29, 2003
    Date of Patent: December 26, 2006
    Assignee: Intel Corporation
    Inventors: Justin K. Brask, Mark L. Doczy, Jack Kavalieros, Matthew V. Metz, Chris E. Barns, Uday Shah, Suman Datta, Christopher D. Thomas, Robert S. Chau