Abstract: Treatment of the positive electrode interface of an antifuse provides significantly improved on-state reliability. Treatments include, but are not limited to, a plasma etch using carbon tetrafluoride (CF.sub.4), a sputter clean using Argon, and wet chemical treatments using dimethyl formamide (and water) or a resist developer.
Type:
Grant
Filed:
November 15, 1996
Date of Patent:
March 7, 2000
Assignee:
Xilinx, Inc.
Inventors:
Martin L. Voogel, Yakov Karpovich, Michael J. Hart