Abstract: Described are multi-tube fabrication techniques for making an optical fiber that is relatively insensitive to bend loss and alleviates the problem of catastrophic bend loss comprises a core region and a cladding region configured to support and guide the propagation of light in a fundamental transverse mode. The cladding region includes (i) an outer cladding region, (ii) an annular pedestal (or ring) region, (iii) an annular inner trench region, and (iv) an annular outer trench region. The pedestal region and the outer cladding region each have a refractive index relatively close to that of the outer cladding region. In order to suppress HOMs the pedestal region is configured to resonantly couple at least one (unwanted) transverse mode of the core region (other than the fundamental mode) to at least one transverse mode of the pedestal region.

Abstract: In one embodiment of the invention, a method of fabricating a SAM device comprises the steps of: (a) providing a substrate having a top surface and a first metal electrode disposed on the top surface, (b) annealing the first metal electrode, (c) forming a SAM layer on a major surface of the first electrode, the SAM layer having a free surface such that the SAM is disposed between the free surface and the major surface of the first electrode, and (d) forming a second metal electrode on the free surface of the molecular layer. Forming step (d) includes the step of (d1) depositing the second metal electrode in at least two distinct depositions separated by an interruption period of time when essentially no deposition of the second metal takes place. SAM FETs fabricated using this method are also described.

Abstract: The RT regions of an ISB light emitter comprise pre-biased SLs and a multiplicity of split quantum wells (SPQWs). A SPQW is a quantum well that is divided into a multiplicity of sub-wells by a first barrier layer sufficiently thin that the upper and lower energy states are split beyond their natural broadening and contribute to different minibands in each RT region. In contrast, adjacent SPQWs are coupled to one another by second barrier layers. The thicknesses of the latter layers are chosen so that minibands are created across each RT region. In one embodiment, the emitter includes an I/R region between adjacent RT regions, and in another embodiment the I/R regions are omitted.