Patents Represented by Attorney Michael L. Oglo

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  • Photoelastic stress sensor
    Patent number: 5728944
    Abstract: A stress detection apparatus is provided. A piece of semiconductor grade, ngle crystal silicon mounted on the material is illuminated by an infrared source with radiation having a wavelength in the range of 800-1100 nanometers. An infrared detector monitors the photoelastic effects of illuminating the single crystal silicon with the radiation.
    Type: Grant
    Filed: January 17, 1996
    Date of Patent: March 17, 1998
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Richard H. Nadolink