Abstract: An apparatus for subdividing a sheet of brittle insulating material with a plurality of semiconductor chips disposed thereon. The chips are separated by row and column kerfs each of which contains a respective scribed line. The subdivision of the sheet is accomplished by placing the sheet in a flexible conformable carrier having an open grid, formed of ribs, with each rib positioned over a respective scribe line on the surface of the sheet and forcing the sheet against an arched anvil, thereby fracturing the sheet along the scribe lines.
Type:
Grant
Filed:
December 22, 2005
Date of Patent:
July 14, 2009
Assignee:
International Business Machines Corporation
Inventors:
Pierre-Luc Duchesne, Pierre Laroche, Nicolas Tessier, Roch Thivierge, Stephane Vanier
Abstract: Systems and methods for program directed memory access patterns including a memory system with a memory, a memory controller and a virtual memory management system. The memory includes a plurality of memory devices organized into one or more physical groups accessible via associated busses for transferring data and control information. The memory controller receives and responds to memory access requests that contain application access information to control access pattern and data organization within the memory. Responding to memory access request includes accessing one or more memory devices. The virtual memory management system includes: a plurality of page table entries for mapping virtual memory addresses to real addresses in the memory; a hint state responsive to application access information for indicating how real memory for associated pages is to be physically organized within the memory; and a means for conveying the hint state to the memory controller.
Type:
Grant
Filed:
August 15, 2006
Date of Patent:
May 26, 2009
Assignee:
International Business Machines Corporation
Abstract: A method and apparatus for correcting embedded memory that has been identified as being defective by a memory controller. The address of the defective memory is provided by the memory controller to Built-In Test (BIST) logic in combination with a Built-In Redundancy Analyzer (BIRA) to replace the defective memory element with a redundant element.
Type:
Grant
Filed:
January 31, 2006
Date of Patent:
April 14, 2009
Assignee:
International Business Machines Corporation
Abstract: The disclosed invention relates to a method and system to transmit data packets through a switched network system that is composed of a plurality of routing entities. The method determines whether or not the output port assigned to the data packet and the associated input port are local to the routing entity by referencing an index pointer to a routing table.
Type:
Grant
Filed:
December 8, 2004
Date of Patent:
March 31, 2009
Assignee:
International Business Machines Corporation
Abstract: To improve the efficiency of access to a system memory associated with changes (writes) to cache data, a cache line having the same memory size as write data is selected and the write data is written into the selected cache line, thereby reducing the number of accesses to the system memory to cache data from the system memory associated with partial replacement of cache lines. Further, valid data at an address contiguous with the address of the write data is combined with the write data, and written into a cache line having the same size as the combined data, thereby reducing the number of accesses to the system memory to flush data from the cache associated with writes to the cache.
Type:
Grant
Filed:
September 13, 2005
Date of Patent:
February 17, 2009
Assignee:
International Business Machines Corporation
Abstract: A method for detecting semiconductor process stress-induced defects. The method comprising: providing a polysilicon-bounded test diode, the diode comprising a diffused first region within an upper portion of a second region of a silicon substrate, the second region of an opposite dopant type from the first region, the first region surrounded by a peripheral dielectric isolation, a peripheral polysilicon gate comprising a polysilicon layer over a dielectric layer and the gate overlapping a peripheral portion of the first region; stressing the diode; and monitoring the stressed diode for spikes in gate current during the stress, determining the frequency distribution of the slope of the forward bias voltage versus the first region current at the pre-selected forward bias voltage and monitoring, after stress, the diode for soft breakdown. A DRAM cell may be substituted for the diode. The use of the diode as an antifuse is also disclosed.
Type:
Grant
Filed:
December 9, 2003
Date of Patent:
November 7, 2006
Assignee:
International Business Machines Corporation
Inventors:
Wagdi W. Abadeer, Eric Adler, Jeffrey S. Brown, Robert J. Gauthier, Jr., Jonathan M. McKenna, Jed H. Rankin, Edward W. Sengle, William R. Tonti