Abstract: Disclosed is a method of fabricating an integrated circuit assembly in which a plurality of mother dice having a plurality of through-die vias (TDVs) are formed in the first (active) surface of a semiconductor wafer, a substrate is attached to the active surface of the wafer, the second (inactive) surface is back-ground to expose one end of the through-die vias, a plurality of daughter dice are mounted to the inactive surface of the wafer, each daughter die being electrically coupled to a mother die, and the mother dice are then singulated. Attaching the substrate can be accomplished by adhering a glass wafer carrier to the wafer. The wafer carrier allows handling of the wafer during back-grinding the inactive surface, forming under-bump metal (UBM) pads on the TDVs and attaching the daughter dice.