Abstract: A thin film superconducting device is described in which the substrate is a single or mixed single crystal of lanthanum orthogallate grown from a pure melt of lanthanum, gallium and additive oxides. A portion of the gallium single crystal can be replaced by Sc, Al or In and/or a portion of the lanthanum can be replaced by a rare earth element of smaller ionic radius than lanthanum to allow for manipulation of the lattice constant.