Patents Represented by Attorney Micheal J. Buchenhorner

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  • High performance metal gate polygate 8 transistor SRAM cell with reduced variability
    Patent number: 7826251
    Abstract: A static random access memory cell includes a metal hi-k layer; a poly-SiON gate stack over the metal hi-k layer; a plurality of inverters disposed within the poly-SiON gate stack; and a plurality of field effect transistors placed in the metal hi-k layer.
    Type: Grant
    Filed: May 22, 2008
    Date of Patent: November 2, 2010
    Assignee: International Business Machines Corporation
    Inventors: Leland Chang, Jeffrey W. Sleight