Abstract: According to the present invention, a circuit, utilizing a minimum number of bipolar devices and current mirror scaling devices, generates a bandgap reference voltage. The bandgap voltage generated by the bandgap reference circuit is a function of a plurality of sized current mirror devices, the ratio of a first resistor to a second resistor, and the number and relative sizing of bipolar junction transistors used. The bandgap reference circuit generates a bandgap reference voltage which is suitable for use in a variety of integrated circuit devices, such as a zero power static random access memory (SRAM). If used in a zero power SRAM application, the bandgap reference voltage may be utilized to determine when the primary power source of the zero power SRAM has fallen below a predetermined voltage level and a secondary power source must be substituted for the primary power source.