Abstract: An IR detector structure is made from a CdTe substrate by polishing the C subtrate, and transferring the cleaned substrate to a chamber for successive epitaxial growth of HgCdTe and CdTe layers insitu without removal reducing contamination at the interfaces due to exposure to the atmosphere.
Type:
Grant
Filed:
July 13, 1989
Date of Patent:
March 5, 1991
Assignee:
The United States of America as represented by the Secretary of the Army