Abstract: An embodiment of the present invention allows mold compound to flow underneath a substrate where the mold compound will remain in place until the process of mold formation is completed. The mold compound of the package will penetrate all available cavities where the mold compound will remain in place and harden. After hardening, the mold compound surrounding a mold anchor will support an anchored area.

Abstract: An ultra-large scale CMOS integrated circuit semiconductor device with LDD structures is manufactured by forming a gate oxide layer over the semiconductor substrate; forming a polysilicon layer over the gate oxide layer; forming a first mask layer over the polysilicon layer; patterning and etching the first mask layer to form a first gate mask; anisotropically etching the polysilicon layer to form a first polysilicon gate, wherein the first polysilicon gate has sidewalls with sloped profiles and the sloped profiles are used as masks during the ion implantation of the LDD structures to space the resultant LDD structures away from the edges of second polysilicon gates to be formed subsequently with substantially vertical profiles.