Abstract: An antenna (10) having an emitter element which is positioned in front of a conductive reflector (13) and has a three-dimensional cast part. The cast part is implemented as conductive and has a closed peripheral structure (11) having alternating constrictions and bulges. The peripheral structure (11) spans an imaginary surface (14) which is intersected by at least two planes of symmetry (15.1, 15.3) of the cast part. At least two fastening elements (12.1, 12.2) are provided, which extend essentially perpendicular to the imaginary surface (14) and support the peripheral structure (11) at two points which lie on one of the planes of symmetry (15.1; 15.3). At the lower ends (16), the fastening elements (12.1, 12.2) are connected to the reflector (13), the fastening elements (12.1, 12.2) also being used for electrical excitation of the emitter element.

Abstract: A tunable Fabry-Perot vertical cavity photonic device and a method of its fabrication are presented. The device comprises top and bottom semiconductor DBR stacks and a tunable air-gap cavity therebetween. The air-gap cavity is formed within a recess in a spacer above the bottom DBR stack. The top DBR stack is carried by a supporting structure in a region thereof located above a central region of the recess, while a region of the supporting structure above the recess and outside the DBR stack presents a membrane deflectable by the application of a tuning voltage to the device contacts.

Abstract: A tunable Fabry-Perot vertical cavity photonic device and a method of its fabrication are presented. The device comprises top and bottom semiconductor DBR stacks and a tunable air-gap cavity therebetween. The air-gap cavity is formed within a recess in a spacer above the bottom DBR stack. The top DBR stack is carried by a supporting structure in a region thereof located above a central region of the recess, while a region of the supporting structure above the recess and outside the DBR stack presents a membrane deflectable by the application of a tuning voltage to the device contacts.

Abstract: An electrically pumped VCSEL and a method of its fabrication are presented. The VCSEL comprises an active cavity material sandwiched between top and bottom DBR stacks, the top DBR having at least one n-semiconductor layer. The device defines an aperture region between the structured surface of the active cavity material and the n-semiconductor layer of the top DBR stack. The structured surface is formed by a top surface of a mesa that includes at least the upper n++ layer of a p++/n++ tunnel junction and the surface of a p-type layer outside the mesa. The structured surface is fused to the surface of the n-semiconductor layer of the DBR stack due to the deformation of these surfaces, thereby creating an air gap in the vicinity of the mesa between the fused surfaces.