Abstract: Method for forming a highly relaxed epitaxial semiconductor layer (52) with a thickness between 100 nm and 800 nm in a growth chamber includes four principle steps. In a first step, the method provides a substrate (51) in the growth chamber on a substrate carrier. In a second step, the method maintains a constant substrate temperature (TS) of the substrate (51) in a range between 350° C. and 500° C. In a third step, the method establishes a high-density, low-energy plasma in the growth chamber such that the substrate (51) is being exposed to the plasma. In a fourth step, the method directs Silane gas (SiH4) and Germane gas (GeH4) through the gas inlet into the growth chamber, the flow rates of the Silane gas and the Germane gas being adjusted in order to form said semiconductor layer (52) by means of vapor deposition with a growth rate in a range between 1 and 10 nm/s. The semiconductor layer (52) has a Germanium concentration x in a range between 0<x<50%.

Abstract: A surgical ratchet assembly includes a handle, a driver, a ratcheting mechanism and a locking mechanism. The driver is received within the handle in a rotatable relationship with respect thereto. The ratcheting mechanism is interposed between the handle and the driver. A locking mechanism releasably holds the handle to the ratchet mechanism. Unlocking of the locking mechanism enables ready disassembly of the assembly for cleaning and component sterilization.

Abstract: A rotary surgical reamer assembly for removing bone and tissue from a joint to facilitate the installation of a prosthetic device. The assembly includes a hollow reamer body having an opening and a base portion. The base portion includes a first pivoting link member, a wall with a surface defining a central cavity, and a plurality of spaced apart cutting sites defining apertures through said wall. A shaft is configured to be de-mountably attached to a rotary source of power. The shaft has a rotary axis and a second pivoting link member coupled to the first pivoting link member. The axis of the shaft forms an angle to the base portion. A mechanism adjusts the angle of the hollow reamer body from an un-deployed position to a deployed position.

Abstract: An x-ray and gamma-ray radiation energy imaging device has its semiconductor detector substrate and semiconductor readout/processing substrate both mounted on opposite sides of, and electrically communicating through, an intermediate substrate. The substrates are all substantially planar with the top plan perimeter of the semiconductor readout/processing substrate falling within the top plan shadow perimeter of the corresponding semiconductor detector substrate with which it electrically communicates. Additionally, all of the readout/processing circuitry contacts of the semiconductor readout/processing substrate are disposed on the surface of the semiconductor readout/processing substrate that electrically communicates with the intermediate substrate. Substantially all electrical communication to and from the semiconductor readout/processing substrate is routed through the intermediate substrate. The intermediate substrate is a printed circuit board or similar construct.

Abstract: The radiation detector/imaging substrate arrays in an x-ray and gamma-ray radiation energy imaging device are described which use an electrically conductive adhesive to provide electron charge signaling continuity between the detector and read-out substrates of the device. The present device utilizes a plurality of electrically conductive bonds each discretely connecting a pixel contact in the pixel pattern to a signal contact in the signal contact pattern, the bonds being an electrically conductive adhesive. This bonding technique is especially useful in detection/imaging arrays having detector substrates comprising Cadmium and Tellurium compositions. The present invention is practicable with semiconductor detector and read-out substrates with or without “bumped” electrical contacts. The electrically conductive bonds utilize either isotropically or anisotropically conductive adhesives.

Abstract: A high voltage switching power supply (10) for an X-ray/Gamma ray imaging camera provides high voltage switching and depolarization capabilities. The power supply includes a high voltage polarity switching and an image detector charge bleeding circuit (90) and is particularly useful with high energy radiation imaging cameras utilizing Cd—Te based detector substrates, especially substrates with blocked contacts, where charge accumulation in the detector material reduces imaging efficiency.

Abstract: An x-ray and gamma-ray radiant energy imaging device is disclosed having a temperature sensitive semiconductor detector substrate bump-bonded to a semiconductor CMOS readout substrate. The temperature sensitive, semiconductor detector substrate utilizes Tellurium compound materials, such as CdTe and CdZnTe. The bump bonds are formed of a low-temperature, lead-free binary solder alloy having a melting point between about 100° C. and about 180° C. Also described is a process for forming solder bumps utilizing the low-temperature, lead-free binary solder alloy, to prevent damage to temperature sensitive and potentially brittle detector substrate when assembling the imaging device.

Abstract: An electrically pumped VCSEL and a method of its fabrication are presented. The VCSEL comprises an active cavity material sandwiched between top and bottom DBR stacks, the top DBR having at least one n-semiconductor layer. The device defines an aperture region between the structured surface of the active cavity material and the n-semiconductor layer of the top DBR stack. The structured surface is formed by a top surface of a mesa that includes at least the upper n++ layer of a p++/n++ tunnel junction and the surface of a p-type layer outside the mesa. The structured surface is fused to the surface of the n-semiconductor layer of the DBR stack due to the deformation of these surfaces, thereby creating an air gap in the vicinity of the mesa between the fused surfaces.