Abstract: Method for forming a highly relaxed epitaxial semiconductor layer (52) with a thickness between 100 nm and 800 nm in a growth chamber includes four principle steps. In a first step, the method provides a substrate (51) in the growth chamber on a substrate carrier. In a second step, the method maintains a constant substrate temperature (TS) of the substrate (51) in a range between 350° C. and 500° C. In a third step, the method establishes a high-density, low-energy plasma in the growth chamber such that the substrate (51) is being exposed to the plasma. In a fourth step, the method directs Silane gas (SiH4) and Germane gas (GeH4) through the gas inlet into the growth chamber, the flow rates of the Silane gas and the Germane gas being adjusted in order to form said semiconductor layer (52) by means of vapor deposition with a growth rate in a range between 1 and 10 nm/s. The semiconductor layer (52) has a Germanium concentration x in a range between 0<x<50%.

Abstract: A surgical ratchet assembly includes a handle, a driver, a ratcheting mechanism and a locking mechanism. The driver is received within the handle in a rotatable relationship with respect thereto. The ratcheting mechanism is interposed between the handle and the driver. A locking mechanism releasably holds the handle to the ratchet mechanism. Unlocking of the locking mechanism enables ready disassembly of the assembly for cleaning and component sterilization.

Abstract: A rotary surgical reamer assembly for removing bone and tissue from a joint to facilitate the installation of a prosthetic device. The assembly includes a hollow reamer body having an opening and a base portion. The base portion includes a first pivoting link member, a wall with a surface defining a central cavity, and a plurality of spaced apart cutting sites defining apertures through said wall. A shaft is configured to be de-mountably attached to a rotary source of power. The shaft has a rotary axis and a second pivoting link member coupled to the first pivoting link member. The axis of the shaft forms an angle to the base portion. A mechanism adjusts the angle of the hollow reamer body from an un-deployed position to a deployed position.