Abstract: A method is provided for processing a semiconductor topography. In an embodiment, the method includes positioning a semiconductor topography against a carrier plate with a raised section. Such a method preferably allows a larger area capable of producing a target yield of semiconductor devices within dimensional specifications to be obtained than is obtained by positioning the topography against a carrier plate with a flat surface. As such, positioning a topography against a carrier plate with one or more raised sections may form a substantially planar upper surface in a larger area than in an area formed by positioning such a topography against a flat surface carrier plate. Furthermore, such a method is preferably conducted in a single polishing step. As such, a polishing system is provided which includes a carrier plate with a raised section adapted to planarize a semiconductor topography in one polishing step.