Patents Represented by Law Firm Morgan, Lewis, & Bockius Lip
  • Crystallization process and method of manufacturing thin film transistor using same
    Patent number: 5753544
    Abstract: A crystallization process comprising the steps of depositing a polycrystalline silicon layer on a semiconductor substrate, implanting silicon ions into first and second areas of the polycrystalline silicon layer in different amounts such that crystals having a predetermined plane direction remain in the second area and such that the first area becomes amorphous, and performing a thermal treatment to recrystallize the amorphous second area using the crystals having the predetermined plane direction remaining in the first area as a nucleus.
    Type: Grant
    Filed: July 7, 1995
    Date of Patent: May 19, 1998
    Assignee: LG Semicon Co., Ltd.
    Inventors: Won Ju Cho, Jae Sung Roh