Abstract: A method and an apparatus for resetting at least one Silicon Controlled Rectifier (SCR) in an H-bridge. The apparatus comprises a current interruption device for controlling current flow through the H-bridge, and a negative voltage detector for detecting a negative voltage at the H-bridge and driving the current interruption device to control the current flow through the H-bridge.

Abstract: A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch and external substrate processing equipment. In one exemplary application, the method is used during a multi-pass process for fabricating a capacitive structure of a trench capacitor.

Abstract: Methods and apparatus for engaging gears in motors are provided herein. In some embodiments, an apparatus for engaging gears in a motor includes an actuator; and an engagement assembly having at least one pawl axially movably configured to selectively couple the engagement assembly with a gear via operation of the actuator. The actuator may be a solenoid, and may further be a single-coil solenoid. The apparatus may further include a shaft having the actuator and engagement assembly disposed thereon; and a gear disposed on the shaft adjacent the engagement assembly.

Abstract: Methods of processing silicon substrates to form metal silicide layers thereover having more uniform thicknesses are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate having a plurality of exposed regions comprising silicon, wherein at least two of the plurality of exposed regions have a different rate of formation of a metal silicide layer thereover; doping at least one of the exposed regions to control the rate of formation of a metal silicide layer thereover; and forming a metal silicide layer upon the exposed regions of the substrate, wherein the metal silicide layer has a reduced maximum thickness differential between the exposed regions.

Abstract: Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include providing a substrate to a process chamber comprising a dielectric layer having a feature formed therein. A barrier layer may be formed within the feature. A coating of a first conductive material may be formed atop the barrier layer. A seed layer of the first conductive material may be formed atop the coating. The feature may be filled with a second conductive material. In some embodiments, the seed layer may be formed while maintaining the substrate at a temperature of greater than about 40 degrees Celsius.

Abstract: Embodiments of a valve assembly for a process chamber having improved seal performance are provided herein. In some embodiments, a valve assembly for a process chamber includes a housing having an opening disposed in a wall thereof and through which a substrate may be transferred; a door movably coupled to the housing in a plane substantially parallel to the wall of the housing for selectively sealing the opening; a compressible sealing member disposed at least partly between an upper surface of the door and a corresponding surface of the housing for forming a seal therebetween by compression of the compressible sealing member in a direction substantially perpendicular to the wall when the door is in a closed position; and a mechanism for restricting the exposure of the compressible sealing member to an environment on a process chamber side of the housing.

Abstract: Method and apparatus for restoring backup data to a computer is described. In one example, selected resources of within the backup data to be restored are specified. An installation package is generated that provides a hierarchical archive of the selected resources and is configured for execution by an operating system of the computer. The installation package is provided to the computer for execution thereon to effect a restoration of the selected resources onto the computer.

Abstract: A method and apparatus for converting Direct Current (DC) to Alternating Current (AC). The method comprises performing system analysis on at least one of a DC current, DC voltage, or an AC voltage; utilizing the system analysis for selecting at least one conversion parameter; and converting DC to AC utilizing the at least one conversion parameter.

Abstract: Methods for removing masking materials from a substrate having exposed low-k materials while minimizing damage to exposed surfaces of the low-k material are provided herein. In one embodiment a method for removing masking materials from a substrate includes providing a substrate having exposed low-k materials and a masking material to be removed; exposing the masking material to a first plasma formed from a reducing chemistry for a first period of time; and exposing the masking material to a second plasma formed from an oxidizing chemistry for a second period of time. The steps may be repeated as desired and may be performed in reverse order. Optionally, at least one diluent gas may be added to the oxidizing chemistry.

Abstract: A method for preparing porous fabrics is disclosed. The method includes transporting PAN-based oxidized fabrics to a thermal treatment chamber, which provides multi-pipe to introduce oxygenated gas and oxygenated fluid respectively, by using a plurality set of rollers to carry out an activation-carbonization process. The activation-carbonization process is preformed within a temperature range of 1010° C. to 1500° C., and produced the porous activated carbon fabrics that provide uniform nano-pore with BET surface area about 800˜1500 m2/g.

Abstract: Methods for etching quartz are provided herein. In one embodiment, a method of etching quartz includes providing a film stack on a substrate support disposed in a processing chamber, the film stack having a quartz layer partially exposed through a patterned layer; and etching the quartz layer of the film stack in a multi-step process including a first step of etching the quartz layer utilizing a first process gas comprising at least one fluorocarbon process gas and a chlorine-containing process gas; and a second step of etching the quartz layer utilizing a second process gas comprising at least one fluorocarbon process gas.

Abstract: Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.

Abstract: A method and apparatus that enable quick recovery from failure or restoration of an application state of one or more nodes, applications, and/or communication links in a distributed computing environment, such as a cluster. Recovery or restoration is facilitated by regularly saving persistent images of the in-memory checkpoint data and/or of distributed shared memory segments using snapshots of the committed checkpoint data. When one or more nodes fail, the snapshots can be read and used to restart the application in the most recently-saved state prior to the failure or rollback the application to an earlier state.

Abstract: Embodiments of the present invention include strut based overrunning pulleys that provide one or more of greater durability, lower heat generation, high torque loads carrying capability, potentially tunable vibration dampening, tunable to maximum permissible torque loads before elastic (repeatable) slippage, and/or ease of end of life assessment. In some embodiments, a pulley assembly includes a shaft; a pocket plate having a plurality of pockets; a notch plate adjacent the pocket plate and having a plurality of notches facing the pockets of the pocket plate; a plurality struts disposed in the pockets; a resilient member disposed within the pockets and biasing the struts towards the notches; and a body disposed about the shaft, pocket plate, and notch plate; wherein one of the pocket plate or the notch plate is rotationally coupled to the shaft and the other of the pocket plate or the notch plate is rotationally coupled to the body.

Abstract: Embodiments of methods of etching EUV photomasks are provided herein. In one embodiment, a method of etching an extreme ultraviolet photomask includes providing a photomask comprising, in order, a substrate, a multi-material layer, a capping layer, and a multi-layer absorber layer, the multilayer absorber layer comprising a self-mask layer disposed over a bulk absorber layer, wherein the self-mask layer comprises tantalum and oxygen and the bulk absorber layer comprises tantalum and essentially no oxygen; etching the self-mask layer using a first etch process; and etching the bulk absorber layer using a second etch process different than the first, wherein the etch rate of the bulk absorber layer is greater than the etch rate of the self-mask layer during the second etch process.

Abstract: A photomask structure and method of etching is provided herein. In one embodiment, a photomask includes a translucent substrate and an opaque multi-layer absorber layer disposed over the substrate. The opaque multi-layer absorber layer comprises a self-mask layer disposed over a bulk absorber layer. The self-mask layer comprises one of nitrogenized tantalum and silicon-based materials (TaSiON), tantalum boron oxide-based materials (TaBO), or oxidized and nitrogenized tantalum-based materials (TaON). The bulk absorber layer comprises on of tantalum silicide-based materials (TaSi), nitrogenized tantalum boride-based materials (TaBN), or tantalum nitride-based materials (TaN). The self-mask layer has a low etch rate during the bulk absorber layer etch step, thereby acting as a hard mask.

Abstract: Method, apparatus, and computer readable medium for classifying a file of interest in a computer network is described. File statistics are received over the network for a plurality of users and a plurality of files. The file statistics are processed to identify: (i) a set of users that received the file of interest; (ii) a group of shared files each of which was received by at least two users; and (iii) numbers of infected files received by respective users. An average ratio of a number of infected files to a total number of files in the group of shared files is computed using a Monte Carlo process constrained by: (i) indications of which users in received which files; and (ii) the numbers of infected files received by the respective users. A probability of infection is assigned to the file of interest based on the average ratio.

Abstract: A method and apparatus for converting DC input power to AC output power. The apparatus comprises an input capacitor, a DC-AC inverter, a burst mode controller for causing energy to be stored in the input capacitor during at least one storage period and the energy to be drawn from the input capacitor during at least one burst period, wherein the AC output power is greater than the DC input power during the at least one burst period; a first feedback loop for determining a maximum power point (MPP) and operating the DC-AC inverter proximate the MPP; and a second feedback loop for determining a difference in a first power measurement and a second power measurement, producing an error signal indicative of the difference, and coupling the error signal to the first feedback loop to adjust at least one operating parameter of the DC-AC inverter to drive toward the MPP.

Abstract: Methods for forming connective elements on integrated circuits for packaging applications are provided herein. In some embodiments, a method of forming connective elements on an integrated circuit for flipchip packaging may include providing a resist layer on the integrated circuit; forming a plurality of holes through the resist layer; filling the plurality of holes with conductive material; and stripping at least a portion of the resist layer using a stripping solution containing acetic anhydride and ozone to expose the connective elements.

Abstract: Various embodiments of a system and method related to a topology and routing model for a peer-to-peer network are disclosed. A plurality of nodes may be coupled to each other to form a peer-to-peer network. A routing table may be created on each node in the peer-to-peer network. Each node may be operable to route messages to other nodes in the peer-to-peer network using information stored in the routing table. Messages may be propagated among nodes in the peer-to-peer network in a decentralized manner. For example, the peer-to-peer network may not utilize centralized servers of any kind. Each node in the peer-to-peer network may perform substantially the same routing functionality.