Abstract: An integrated circuit memory device includes programmed memory cells and programmable and erasable memory cells. The memory device includes a first memory array block in which programmed memory cells are arranged and a second memory array block in which programmable and erasable memory cells are arranged. The programmed memory cells in the first memory array block may be programmed with predetermined data during a semiconductor manufacturing process, and may be mask read-only memory (ROM) cells. The programmable and erasable memory cells in the second memory array block may be programmed or erased with predetermined data after the semiconductor manufacturing process, and may be electrically erasable and programmable read-only memory (EEPROM) cells or flash memory cells.

Abstract: Microlens sheets include a first array of anamorphic micolenses on a face of a substrate. The microlenses in the first array are defined by a first parametric model along a direction of the first array. A second array of anamorphic micolenses is also provided on the face of the substrate, and interspersed with the first array. The microlenses in the second array are defined by a second parametric model that is different from the first parametric model, along the direction of the first array.