Abstract: Some embodiments of the present invention provide adapters for use in posterior imaging systems. The adapters include lens set configured to adapt the posterior imaging system to operate as an anterior imaging system. Related optical coherence tomography systems and anterior imaging systems are also provided herein.

Abstract: Multimedia data having a first resolution is transmitted and supplemental data is separately transmitted. When combined with the multimedia data having a first resolution, the supplemental data provides the multimedia content at a second resolution that is higher than the first resolution. The multimedia data having a first resolution is received and the supplemental data is separately received. The multimedia data having a first resolution and the supplemental data are combined, to provide the multimedia content at a second resolution that is higher than the first resolution. The multimedia data having a first resolution may be transmitted, received and played using streaming, while the supplemental data may be transmitted, received and played by downloading. Digital rights management schemes may be applied to the multimedia data having a first resolution and/or to the supplemental data.

Abstract: Integrated circuit devices include data inversion circuits therein that are configured to evaluate at least first and second ordered groups of input data in parallel with an ordered group of output data previously generated by the data inversion circuit. The data inversion circuit is further configured to generate inverted versions of the first and second ordered groups of input data as versions of the first and second ordered groups of data in parallel at outputs thereof whenever a number of bit differences between the first ordered group of input data and the ordered group of output data is greater than one-half a size of the first ordered group of input data and a number of bit differences between the second ordered group of input data and the version of the first ordered group of input data is greater than one-half a size of the second ordered group of input data, respectively.

Abstract: A fin field effect transistor (FinFET) includes a substrate, a fin, a gate electrode, a gate insulation layer, and source and drain regions in the fin. The fin is on and extends laterally along and vertically away from the substrate. The gate electrode covers sides and a top of a portion of the fin. The gate insulation layer is between the gate electrode and the fin. The source region and the drain region in the fin and adjacent to opposite sides of the gate electrode. The source region of the fin has a different width than the drain region of the fin.

Abstract: A contact hole can be formed in an insulating layer to expose a surface of an underlying silicon layer at a bottom of the contact hole having a first size. A metal silicide layer can be formed beneath the bottom of the contact hole and removed to form a void beneath the contact hole having a second size that is greater than the first size.