Abstract: To improve bioavailability of the catalytic metalloporphyrin-based SOD mimics Mn(III) 5,10,15,20-tetrakis[N-ethylpyridinium-2-yl]porphyrin (MnTE-2-PyP5+) and Mn(III) 5,10,15,20-tetrakis[N,N?-diethylimidazolium-2-yl]porphyrin (MnTDE-2-ImP5+), three new Mn(III) porphyrins, bearing oxygen atoms within side chains, were synthesized and characterized: Mn(III) 5,10,15,20-tetrakis[N-(2-methoxyethyl)pyridinium-2-yl]porphyrin (MnTMOE-2-PyP5+), Mn(III) 5,10,15,20-tetrakis[N-methyl-N?-(2-methoxyethyl)imidazolium-2-yl]porphyrin (MnTM,MOE-2-ImP5+) and Mn(III) 5,10,15,20-tetrakis[N,N?-di(2-methoxyethyl)imidazolium-2-yl]porphyrin (MnTDMOE-2-ImP5+). The catalytic rate constants for O2.? dismutation (and the related metal-centered redox potentials vs NHE) for the new compounds are: log kcat=8.04 (E1/2=+251 mV) for MnTMOE-2-PyP5+, log kcat=7.98 (E1/2=+356 mV) for MnTM,MOE-2-ImP5+ and log kcat=7.59 (E1/2=+365 mV) for MnTDMOE-2-ImP5+. At 30 ?M levels none of the new compounds were toxic, and allowed SOD-deficient E.

Abstract: An enclosure for mounting on a substrate includes a rigid tubular support member and a revolvable elastic sleeve having a double wall enclosing lubricant sealed therein. The sleeve is mounted on the support member in an expanded state with a portion of the inner wall of the sleeve secured to the support member so that the sleeve can be revolved over the end of the support member to contract elastically to a less expanded state while retaining a portion of the sleeve on the support.

Abstract: A silicon carbide (SiC) metal-insulator semiconductor field effect transistor having a u-shaped gate trench and an n-type SiC drift layer is provided. A p-type region is formed in the SiC drift layer and extends below the bottom of the u-shaped gate trench to prevent field crowding at the corner of the gate trench. A unit cell of a metal-insulator semiconductor transistor is provided having a bulk single crystal SiC substrate of n-type conductivity SiC, a first epitaxial layer of n-type SiC and a second epitaxial layer of p-type SiC. First and second trenches extend downward through the second epitaxial layer and into the first epitaxial layer with a region of n-type SiC between the trenches. An insulator layer is formed in the first trench with the upper surface of the insulator on the bottom of the trench below the second epitaxial layer. A region of p-type SiC is formed in the first epitaxial layer below the second trench.