Abstract: A method for fabricating a light exposure mask, including forming a pattern on a wafer by use of a primary light exposure mask formed with a light shield film pattern in accordance with a design rule, transmitting, to a data comparison system, data obtained after measuring the size of the pattern on the wafer by use of a process defect inspection system, comparing the data with the size of the light shield film pattern, thereby detecting a portion of the pattern on the wafer which has a difference from a critical size value of the light shield film pattern, determining, by use of a compensation equation, an amendment value for a portion of the light shield film pattern which corresponds to the detected portion of the pattern on the wafer, and forming a secondary light exposure mask, based on the amendment value.