Abstract: The present invention relates to a structure of a high-density flip-chip integrated circuit package and a method for the same. At first, traces and a plural of solder pads are formed on a surface of a substrate simultaneously, wherein a height of the traces is as same as a height of the solder pads. Before adhering solder bumps of the chip to the solder pads, the solder bumps are dipped by using a flux at first and then the chip is connected to the substrate by using a underfill mode to avoid over-wetting defects in the reflow process. At last, the substrate and the chip are covered by using molding underfill to protect traces directly.

Abstract: Topical gelled compositions comprising an optional drug dispersed within a polymer matrix, methods of producing the same and treatments with the complex.

Abstract: The present invention relates to a row address strobe signal generating device for a semiconductor memory device, and in particular a row address strobe signal generating device which can prevent a cell data from being destroyed during a data maintenance time, by sufficiently obtaining a writing time of the cell data. The row address strobe signal generating device includes a write recover signal generating device, and thus controls a disable state of a row address strobe signal during a write operation. Accordingly, the row address strobe signal is disabled only after a write recover signal is disabled. As a result, a cell data writing time is sufficiently obtained in a high speed memory, and thus the stored cell data is not destroyed during the data maintenance time.