Patents Represented by Law Firm Nields and Lemack
  • Ion source
    Patent number: 5162699
    Abstract: An ion source of high ion yield, especially boron yield, is provided with a boron compound of high melting point and low work function such as LaB.sub.6 (lanthanum hexaboride) at a suitable location inside the arc chamber of the ion source, which operates on the principle of ion production by using a hot cathode to produce hot electrons.
    Type: Grant
    Filed: October 11, 1991
    Date of Patent: November 10, 1992
    Assignee: Genus, Inc.
    Inventors: Nobuhiro Tokoro, Richard C. Becker