Patents Represented by Attorney Nixon Peabobdy LLP

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  • Thin film transistor
    Patent number: 8283667
    Abstract: A thin film transistor is provided, which includes a gate electrode layer over a substrate, a gate insulating layer over the gate electrode layer, a layer including an amorphous semiconductor over the gate insulating layer, a pair of crystal regions over the layer including the amorphous semiconductor, and source and drain regions over and in contact with the pair of crystal regions. The source and drain regions include a microcrystalline semiconductor layer to which an impurity imparting one conductivity type is added.
    Type: Grant
    Filed: August 25, 2009
    Date of Patent: October 9, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Erika Takahashi, Takayuki Kato, Hidekazu Miyairi, Yasuhiro Jinbo