Abstract: Disclosed herein is a three dimensional small bin electromagnetic consecutive array data acquisition method used in oil exploration comprising the steps of recording data using small bin lattices on execution of arrangement electrodes, each acquisition station (Ex, Ey) records the natural electromagnetic field time series data with the same acquisition parameter simultaneously; interference is removed first, for recorded data processing to get interference-free data; for border points and center point, the recording point serves as center point, and the same component from adjacent two points to total points area added together to obtain the average value of electric field data at time domain for each observation point; for corner points, the average values of the same electric field component from adjacent two points to total survey points toward bin direction is calculated; the electric field components acquired in maximum space serve as the new electric field values respectively; new time series data acqui
Type:
Grant
Filed:
September 22, 2010
Date of Patent:
December 11, 2012
Assignees:
China National Petroleum Corporation, BC-P Inc., China National Petroleum Corporation
Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the absorber layer and the window layer to create improved junctions. The present invention also discloses methods for making and surface treatments for thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration to create devices with improved junctions.
Type:
Grant
Filed:
March 24, 2009
Date of Patent:
March 27, 2012
Assignee:
Solexant Corp.
Inventors:
Puthur D. Paulson, Charlie Hotz, Craig Leidholm, Damoder Reddy
Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.
Type:
Grant
Filed:
March 13, 2009
Date of Patent:
December 28, 2010
Assignee:
Solexant Corp.
Inventors:
Charlie Hotz, Puthur D. Paulson, Craig Leidholm, Damoder Reddy